PECVD deposition machine / vacuum

NANO-MASTER, Inc. PECVD systems are capable of depositing high quality SiO2, Si3N4, or DLC films on up to 8? diameter substrate sizes. To generate plasma, it uses RF shower head electrode or Hollow Cathode RF plasma source with Fractal Gas Distribution. The platen can be biased with RF or Pulsed DC and it is heated resistively or cooled with chilled water circulation. The chamber is evacuated to low

10-7 torr pressure using 250 l/sec turbomolecular pump backed with 3.5 cfm mechanical pump. Standard unit comes with one inert gas, three reactive gas lines and four mass flow controllers. The planar Hollow Cathode Plasma source with its unique gas distribution system makes it possible to meet wide range of requirements such as plasma density, uniformity and separate activation of reactive species to cover the broadest possible deposition parameters.